Перегляд за автором "Savkina, R.K."

Сортувати за: Порядок: Результатів:

  • Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys 
    Olikh, Y.M.; Savkina, R.K.; Vlasenko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase ...
  • Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence 
    Savkina, R.K.; Smirnov, A.B.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have carried out a systematic study of mercury cadmium telluride crystals subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier transport parameters were determined from the Hall ...
  • Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication 
    Savkina, R.K.; Sizov, F.F.; Smirnov, A.B.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined ...
  • Narrow-gap piezoelectric heterostructure as IR detector 
    Sizov, F.F.; Smirnov, A.B.; Savkina, R.K.; Deriglazov, V.A.; Yakushev, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The ...
  • Optically induced change of photoelectric properties of CdMnTe crystals 
    Savkina, R.K.; Sizov, F.F.; Smirnov, A.B. (Functional Materials, 2005)
    To study the optically induced transformation of the point defect system under strong ans weak excitation from the intrinsic absorption hv > Eg, photoelectric and electric properties of semiconductor solid solutions С₁-хМnхТе ...
  • Properties of the crystalline silicon strained via cavitation impact 
    Savkina, R.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Properties of crystalline silicon under acoustic cavitation have been investigated. The cavitation impact was initiated by focusing a high-frequency (1– 6 MHz) acoustic wave in liquid nitrogen. AFM, optical and scanning ...
  • Semiconductor surfaces structurization induced by ultrasound 
    Savkina, R.K. (Functional Materials, 2012)
    Gallium arsenide and silicon substrates were exposed to cavitation impact induced by focusing a high frequency acoustic wave into liquid nitrogen. Optical and atomic force microscopy methods as well as energy dispersive ...